Journal of Research in VLSI Design Tools and Technology ISSN: 3139-2016 (Online)

Authors: Arun Kashyap

Abstract: Ti/Al and Ti/Al/Ni/Au ohmic contacts were applied to n-type GaN using an electron beam evaporator, and subsequent characterization was performed through Scanning Electron Microscope (SEM) analysis. The impact of annealing temperature on the surface morphology of both Ti/Al/Ni/Au and Ti/Al ohmic contacts was investigated. Image processing techniques, facilitated by MATLAB software, were employed for a detailed examination of the surface morphology of these ohmic contacts. Prior to porosity analysis, images underwent preprocessing steps. The MATLAB software was utilized to quantify the porosity within the ohmic contact structures. The resulting quantitative data was then correlated with the fabrication process, providing insights into the influence of annealing temperature on the surface characteristics of Ti/Al and Ti/Al/Ni/Au ohmic contacts on n-type GaN.

Keywords: MATLAB software, Anneal, GaN, Ohmic contact, Porosity