Author: Ankur Singh, Amna Chandra
Abstract: Three-dimensional integrated circuits (3D ICs) are revolutionizing semiconductor design by offering significant advantages in device density, performance, and power efficiency. The advent of Through-Silicon Vias (TSVs) and monolithic stacking has enabled vertical integration of circuits, reducing interconnect lengths and improving signal integrity. This paper reviews the fundamentals of 3D ICs, focusing on TSV-based integration and monolithic 3D stacking, highlighting the design challenges, manufacturing techniques, thermal management strategies, and emerging applications. A comparative analysis of TSV and monolithic stacking approaches is provided, alongside a discussion of future research trends. The insights presented aim to guide researchers and engineers in the development of next-generation high-performance and energy-efficient integrated circuits.
Keywords: 3D IC, Through-Silicon Via (TSV), Monolithic Stacking, Vertical Integration, Thermal Management, High-Density Integration.
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