ABSTRACT
The rapid evolution of power electronics and high-frequency switching applications demands semiconductor devices with superior efficiency, thermal stability, and switching performance. Traditional silicon (Si) devices are reaching their performance limits in high-power and high-temperature environments. Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have emerged as promising alternatives due to their higher breakdown voltage, faster switching speed, and better thermal characteristics. However, each material has its own limitations in terms of cost, fabrication complexity, and integration. Hybrid transistor systems that combine Si, SiC, and GaN devices in a single architecture provide an effective solution to utilize the advantages of each material. This paper reviews the concept, architecture, benefits, challenges, and applications of hybrid transistor systems. It also discusses design strategies, thermal management, packaging concerns, and future trends. Tables and comparative analysis are presented to highlight the performance differences.
KEYWORDS: Hybrid transistors, Silicon carbide, Gallium nitride, Wide bandgap semiconductors, Power electronics, High frequency switching.
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