ABSTRACT
Wide Bandgap (WBG) semiconductor devices, including silicon carbide (SiC) and gallium nitride (GaN), are rapidly becoming the cornerstone of high performance power electronics due to their superior electrical and thermal properties. Despite these advantages, WBG devices face reliability challenges caused by complex failure mechanisms, thermal stresses, and material degradation. This paper presents a comprehensive review of the reliability issues, underlying failure mechanisms, and lifetime prediction models for WBG devices. Emphasis is placed on the effects of thermal cycling, bias stress, and packaging on device degradation. Key reliability assessment methods and predictive modeling approaches are also discussed. Tables and figures summarize common failure modes, stress factors, and reliability estimation techniques, offering insights for both academic research and industrial applications.
KEYWORDS: Wide Bandgap, SiC, GaN, reliability, failure mechanisms, lifetime prediction, thermal stress, power electronics
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