Abstract
Copper is one of the most employed metals in the manufacturing industries for a variety of applications due to its high electrical and thermal conductivities. This metal has also attracted much interest as a thin and ultrathin film material, which was driven by the increasing demand for nano ranged downscaled electrical, electronic, and magnetic devices Cu thin films with different thicknesses from 50 220 nm have been deposited on glass substrate by DC magnetron sputtering technique at room temperature in pure Ar gas. The thickness effect on the structural, morphological and electrical properties were studied by X-ray diffraction (XRD), atomic force microscope (AFM) and four point probe (FPP) measurements, respectively. By varying the films thickness the significant changes were observed in the films surface morphology due to the mechanism of films growth. Finally, the relationship between film resistivity and Cu film thickness are investigated in this paper.
Keywords: Copper Thin Films, Electrical Resistivity, X-ray diffraction (XRD),
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