Abstract
Wide-bandgap (WBG) semiconductors, especially silicon carbide (SiC) and gallium nitride (GaN), are increasingly adopted in electric vehicle (EV) traction inverter systems to improve efficiency, power density, and thermal robustness. Traditional silicon-based inverters suffer from high switching losses and limited thermal tolerance, which constrain EV performance and range. WBG devices overcome these challenges by offering larger bandgap energies, enabling higher blocking voltages, faster switching, and reduced conduction losses. This review paper surveys the progress of WBG inverters specific to EV traction applications, comparing SiC and GaN technologies, exploring challenges in implementation, and outlining future research directions. Several tables and figures are included to illustrate key concepts and device comparisons. The paper concludes that wide-bandgap inverters are rapidly becoming critical enablers for next-generation high-efficiency EV powertrains.
Keywords: Wide-bandgap semiconductors, electric vehicles, traction inverter, silicon carbide, gallium nitride, power electronics.
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