Journal of Current Trends in Electrical Engineering ISSN: 3107-4375 (Online)

Authors: Md. Iqbal Bahar Chowdhury, Muhammad Johirul Islam, Md. Mahmudul Hasan, Md. Jahorul Islam, Sadia Ummey Farwah

Abstract: In this work, a cylindrical gate-all-around (CGAA) FET (field-effect transistor) structure with Indium Arsenide (InAs) nanowire is used as channel instead of silicon nanowire, and aluminium oxide is used as the gate dielectrics instead of silicon dioxide. The performance of this setup was demonstrated using ATLAS simulator of Silvaco TCAD software. Indium Arsenide is chosen due to its high electron velocity, high saturation velocity and low contact resistance, whereas, aluminium oxide is chosen because of its higher permittivity. Simulation results indicate that the proposed combination is superior to the CGAA structures having channel-gate dielectrics that use combinations of silicon-silicon dioxide and Indium Arsenide-silicon dioxide. The effects of variation of nanowire radius, channel length and oxide thickness on the output and transfer characteristics curves, and also on the performance parameters such as maximum drain current, maximum transconductance, on resistance and inverse subthreshold slope are investigated to show the superiority of the proposed structure.

Keywords: Cylindrical Gate All around MOSFET; Indium Arsenide nanowire; Aluminium Oxide; high-k dielectrics