ABSTRACT
The rapid evolution of power semiconductor technology has significantly influenced the performance of modern electric drive systems. Wide bandgap (WBG) semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN), have emerged as strong alternatives to conventional silicon devices due to their superior electrical and thermal properties. This paper investigates the impact of SiC and GaN devices on the efficiency, power density, thermal performance, and reliability of electric drive systems. Comparative analysis with silicon-based drives is presented using experimental trends reported in literature. Key challenges such as electromagnetic interference, gate drive complexity, and long-term reliability are also discussed. The study concludes that WBG-based drives offer substantial efficiency improvements and enhanced reliability when appropriate design practices are adopted.
KEYWORDS: - Wide bandgap semiconductors, Silicon carbide, Gallium nitride, Electric drives, Efficiency, Reliability, Power electronics
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