Authors: R Karthik, Vijetha Tummala, Deepti Prakash, K V Ramya
Abstract:
The Monte Carlo Simulation Technique is described and the technique has been applied to obtain the velocity-field characteristics of different compound semiconductors. The results agree with the available experimental data and with those obtained by Boltzmann Transport Equation analytically.
Keywords: Monte carlo simulation, compound semiconductors, numerical technique, electron mobility
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