Authors: M. A. I. Nahid, Mikihiko Oogane, Miho Watanabe, Hiroshi Naganuma, Yasuo Ando
Abstract: The phase MnAl films were epitaxially grown on MgO(100) substrate
with CrRu buffer layer by dc sputtering. The magnetic and structural
properties were studied systematically by varying the growth temperature.
The films grown at 300oC possess higher magnetic anisotropy constant of
about 2×106 erg/cc. The saturation magnetization obtained in that sample
was about 470 emu/cc. The CrRu buffer layer and growth temperature
plays an important role in the epitaxial growth of -phase MnAl thin films.
It is observed that there is a strong correlation between structural and
magnetic properties of the MnAl film which can be tuned by the growth
temperature.
Keywords: Epitaxial Growth, Buffer Layer, Tau Phase, Magnetic
Anisotropy Constant.
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