Journal of Research in Materials and Metallurgical Engineering

Authors: M. A. I. Nahid, Mikihiko Oogane, Miho Watanabe, Hiroshi Naganuma, Yasuo Ando

Abstract: 

The ï´-phase MnAl films were epitaxially grown on MgO(100) substrate with CrRu buffer layer by dc sputtering. The magnetic and structural properties were studied systematically by varying the growth temperature. The films grown at 300oC possess higher magnetic anisotropy constant of about 2×106 erg/cc. The saturation magnetization obtained in that sample was about 470 emu/cc. The CrRu buffer layer and growth temperature plays an important role in the epitaxial growth of ï´-phase MnAl thin films. It is observed that there is a strong correlation between structural and magnetic properties of the MnAl film which can be tuned by the growth temperature.