Abstract
Due to the explosive growth of battery-less electronics and biomedical applications, ultra-low-power (ULP) circuits have drawn a lot of attention. ULP circuits employ the subthreshold region of transistor operation. The primary research challenge in the subthreshold operating region is to reap the benefits of ULP while suffering the least amount of speed and robustness loss. The performance of subthreshold circuits is significantly impacted by variations in Process, Voltage, and Temperature (PVT). Temperature changes have the potential to significantly alter the designed performance parameters of ULP circuits. The purpose of this paper is to determine the impact of temperature variation on device and circuit performance parameters at various biassing voltages in the subthreshold region. According to simulation results, performance parameters are significantly impacted by deep subthreshold and near threshold voltage regions, whereas moderate subthreshold voltage regions are where subthreshold circuits are more resistant to temperature changes. This proves that temperature immune circuits work best in the moderate subthreshold region.
Keywords: Subthreshold, ultralow power, temperature variations.
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