Emerging Semiconductor Devices (Wide Band-Gap, Gallium Nitride, Silicon Carbide) And Their Circuit/System Integration for Next-Generation Electronic and Power Applications

Abstract

The continuous advancement in semiconductor technology has led to the development of wide band-gap (WBG) materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC), which are revolutionizing the design and performance of modern power and electronic systems. Compared to conventional silicon-based devices, WBG semiconductors exhibit superior electrical, thermal, and switching characteristics that enable higher efficiency, compact design, and greater operational reliability. This paper provides a comprehensive study of the emerging semiconductor devices, focusing on GaN and SiC technologies, their electrical and material properties, and their integration into circuits and systems for various applications. Furthermore, the paper discusses design challenges, thermal management, and future research directions for efficient circuit and system-level integration of WBG devices in advanced energy, communication, and transportation systems.

KEYWORDS: Wide Band-Gap Semiconductors, Gallium Nitride (GaN), Silicon Carbide (SiC), Power Electronics, Circuit Integration, System Design, Thermal Management, High-Frequency Devices.