Advanced Finfet-Based Logic Arrays for High-Performance NanoCmos Applications

Abstract

ABSTRACT: This study presents novel FinFET-based logic array architectures tailored for nano-CMOS nodes below 3 nm. The design leverages improved gate electrostatics, multiple-fin tuning, and contact-over-active-gate (COAG) features to reduce switching delay and dynamic energy. A detailed TCAD analysis investigates short-channel effects, fringing capacitances, and processinduced variations. Simulation of a 64-bit arithmetic unit using the proposed logic arrays shows a 26% improvement in energy-delay product (EDP) over standard 3 nm libraries. Furthermore, the array layout is optimized for manufacturability, employing self-aligned patterning and multi-height standard cells to achieve compact area utilization. These results highlight the continued relevance of FinFET architecture in the deeply scaled nanoelectronics era, despite emerging transistor technologies.

KEYWORDS: FinFET, Nano-CMOS, Logic array, TCAD modeling, High performance